منابع مشابه
The mechanism of ion induced amorphization in Si
Damage build up and amorphization in Si, induced by 25 keV Si 5 cluster ions and similar mass Cs ions have been studied using transmission electron microscopy and channeling Rutherford backscattering spectrometry. Amorphization is found to be a nucleation and growth process, under the direct impact mechanism. A transition to a completely amorphized state is indicated at a dose of around 17 eV/a...
متن کاملAmorphization of Ge and Si nanocrystals embedded in amorphous SiO2 by ion irradiation
M. Backman,1 F. Djurabekova,1,2,* O. H. Pakarinen,1 K. Nordlund,1 L. L. Araujo,3 and M. C. Ridgway3 1Helsinki Institute of Physics and Department of Physics, University of Helsinki, P.O. Box 43, Helsinki FI-00014, Finland 2Arifov Institute of Electronics, Durmon yuli 33, 100125 Tashkent, Uzbekistan 3Department of Electronic Materials Engineering, Research School of Physical Sciences and Enginee...
متن کاملAmorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si
Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 9 10 cm 2 to 8.0 9 10 cm 2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of 5.0 9 10 cm . Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free gr...
متن کاملAmorphization of Si using cluster ions
Amorphization process associated with cluster implants has been studied by cross-sectional transmission electron microscopy for P4 cluster implants !5 keV equivalent monomer energy" as a function of dose and compared to that of monomer P implant at the same equivalent energy. Amorphous pockets are formed by the cluster implant at doses of as low as 6!1013 /cm2, and a continuous amorphous layer ...
متن کاملAmorphization of crystalline Si due to heavy and light ion irradiation
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 1991
ISSN: 0168-583X
DOI: 10.1016/0168-583x(91)95238-9